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THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTION

Gallium polyphosphate was synthesized using the method of solid-phase reac-tion between Ga(NO3)3 and NH4H2PO4. Some properties of gallium polyphos-phate and compound on its basis, such as index of refraction, density, conduc-tivity were studied. New composition of semiconductor film is developed, and the properties semiconductor film at the base of gallium polyphosphate.

 
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